1N3880R — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N3880R: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.190 INCHES NOMINAL IN, mounting_method: THREADED HOLE(S), overall_diameter: 0.405 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-076-8581, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N3880R

NSN: 5961-01-076-8581
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.190 INCHES NOMINAL IN
mounting_method	THREADED HOLE(S)
overall_diameter	0.405 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
terminal_type_and_quantity	1 THREADED STUD AND 1 TAB, SOLDER LUG
current_rating_per_characteristic	6.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS JUNCTION DEGC
NSN	5961-01-076-8581

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.405 INCHES NOMINAL IN

•

MOUNTING METHOD: THREADED HOLE(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.405 INCHES NOMINAL IN
MOUNTING METHOD	THREADED HOLE(S)
OVERALL LENGTH	0.190 INCHES NOMINAL IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	6.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 2

F410Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

0540-3880-2Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N3880R?

1N3880R is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N3880R?

There are 2 known substitutes for 1N3880R: F410, 0540-3880-2. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N3880R?

1N3880R is cataloged in the U.S. Government catalog under NSN 5961-01-076-8581. This indicates validated use in U.S. government and defense supply chains.

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1N3880R — SEMICONDUCTOR DEVICE,DIODE

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