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1N3660 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N3660: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.225 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.503 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-237-3157, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N3660
NSN: 5961-00-237-3157
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 43611 — MICROSEMI CORP - MASSACHUSETTS (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.225 INCHES NOMINAL IN
mounting_methodTERMINAL
terminal_length0.500 INCHES MINIMUM IN
overall_diameter0.503 INCHES NOMINAL IN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity1 UNINSULATED WIRE LEAD AND 1 CASE
current_rating_per_characteristic30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
voltage_rating_in_volts_per_characteristic100.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point175.0 CELSIUS CASE DEGC
NSN5961-00-237-3157
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N3660 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS CASE DEGC
•
OVERALL DIAMETER: 0.503 INCHES NOMINAL IN
•
TERMINAL LENGTH: 0.500 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 CELSIUS CASE DEGC
OVERALL DIAMETER0.503 INCHES NOMINAL IN
TERMINAL LENGTH0.500 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.225 INCHES NOMINAL IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MATERIALSILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY1 UNINSULATED WIRE LEAD AND 1 CASE
OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware
Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.
5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978
SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1N3660?
1N3660 is a SEMICONDUCTOR DEVICE,DIODE.
What is the NSN for 1N3660?
1N3660 is cataloged in the U.S. Government catalog under NSN 5961-00-237-3157. This indicates validated use in U.S. government and defense supply chains.
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