1N3575 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N3575: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MAXIMUM IN, overall_diameter: 0.125 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-952-5565, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N3575

NSN: 5961-00-952-5565
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

material	GLASS ENCLOSURE
overall_length	0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MAXIMUM IN
overall_diameter	0.125 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE3530 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
voltage_rating_in_volts_per_characteristic	60.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-952-5565

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.125 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.125 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
SPECIFICATION/STANDARD DATA	80131-RELEASE3530 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE 3530Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N3575?

1N3575 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N3575?

There is 1 known substitute for 1N3575: RELEASE 3530. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N3575?

1N3575 is cataloged in the U.S. Government catalog under NSN 5961-00-952-5565. This indicates validated use in U.S. government and defense supply chains.

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1N3575 — SEMICONDUCTOR DEVICE,DIODE

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