1N3271R — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N3271R: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 2.250 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.750 INCHES IN, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-006-9099, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N3271R

NSN: 5961-00-006-9099
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	2.250 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.750 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	1.250 INCHES MAXIMUM IN
terminal_type_and_quantity	1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
specification/standard_data	80131-RELEASE3660 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
current_rating_per_characteristic	160.00 AMPERES MAXIMUM FORWARD CURRENT, DC
voltage_rating_in_volts_per_characteristic	800.0 MAXIMUM REVERSE VOLTAGE, PEAK
NSN	5961-00-006-9099

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-9

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 1.250 INCHES MAXIMUM IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	800.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	190.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	DO-9
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	2.250 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	1.250 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.750 INCHES IN
CURRENT RATING PER CHARACTERISTIC	160.00 AMPERES MAXIMUM FORWARD CURRENT, DC

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE3660Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N3271R?

1N3271R is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N3271R?

There is 1 known substitute for 1N3271R: RELEASE3660. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N3271R?

1N3271R is cataloged in the U.S. Government catalog under NSN 5961-00-006-9099. This indicates validated use in U.S. government and defense supply chains.

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1N3271R — SEMICONDUCTOR DEVICE,DIODE

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