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1N3261R — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N3261R: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 3.097 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 1.443 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE AND REVERSE POLARITY, nominal_thread_size: 0.750 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-232-3690, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N3261R
NSN: 5961-00-232-3690
NIINs: 002323690, 011775338
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 03508 — GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length3.097 INCHES MAXIMUM IN
mounting_methodTHREADED STUD(S)
overall_diameter1.443 INCHES NOMINAL IN
features_providedHERMETICALLY SEALED CASE AND REVERSE POLARITY
nominal_thread_size0.750 INCHES IN
thread_series_designatorUNF
mounting_facility_quantity1
overall_width_across_flats1.250 INCHES MAXIMUM IN
terminal_type_and_quantity1 THREADED STUD AND 1 TAB W/WIRE LEAD
current_rating_per_characteristic160.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 12.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK
voltage_rating_in_volts_per_characteristic100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
NSN5961-00-232-3690
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N3261R MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 CELSIUS CASE DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
OVERALL DIAMETER: 1.443 INCHES NOMINAL IN
•
MOUNTING METHOD: THREADED STUD(S)
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
NOMINAL THREAD SIZE: 0.750 INCHES IN
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT190.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY1
OVERALL DIAMETER1.443 INCHES NOMINAL IN
MOUNTING METHODTHREADED STUD(S)
OVERALL LENGTH2.250 INCHES NOMINAL IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
NOMINAL THREAD SIZE0.750 INCHES IN
CURRENT RATING PER CHARACTERISTIC2000.00 AMPERES MAXIMUM SOURCE CURRENT
MATERIALSILICON SEMICONDUCTOR
SUBSTITUTES & CROSS-REFERENCES 4
A190RAX92Reference document
Same NSN cross-reference
Reference document — Secondary reference
A91AX92Reference document
Same NSN cross-reference
Reference document — Secondary reference
A190RAX20Reference document
Same NSN cross-reference
Reference document — Secondary reference
1901-0337Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1N3261R?
1N3261R is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1N3261R?
There are 4 known substitutes for 1N3261R: A190RAX92, A91AX92, A190RAX20 and 1 more. Substitute compatibility should be verified for your specific system.
What is the NSN for 1N3261R?
1N3261R is cataloged in the U.S. Government catalog under NSN 5961-00-232-3690. This indicates validated use in U.S. government and defense supply chains.
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