1N3062 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N3062: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.107 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-433-7789, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N3062

NSN: 5961-00-433-7789
NIINs: 004337789, 009230952, 009320550, 009982757
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 31338 — SEMITRONICS CORP (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.300 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.107 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE3453 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic	75.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-433-7789

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: -20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	75.0 MAXIMUM REVERSE VOLTAGE, PEAK
OVERALL DIAMETER	0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	-20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 0.10 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 2

10174034Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

FDH9129Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N3062?

1N3062 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N3062?

There are 2 known substitutes for 1N3062: 10174034, FDH9129. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N3062?

1N3062 is cataloged in the U.S. Government catalog under NSN 5961-00-433-7789. This indicates validated use in U.S. government and defense supply chains.

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1N3062 — SEMICONDUCTOR DEVICE,DIODE

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