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1N2979 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N2979: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.237 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), overall_diameter: 0.424 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-422-0087, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N2979
NSN: 5961-00-422-0087
NIINs: 004220087, 004503014, 008533438, 010803347
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 80131 — ELECTRONIC INDUSTRIES ASSOCIATION
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length1.237 INCHES NOMINAL IN
mounting_methodTHREADED STUD(S)
overall_diameter0.424 INCHES NOMINAL IN
features_providedHERMETICALLY SEALED CASE
nominal_thread_size0.190 INCHES IN
thread_series_designatorUNF
mounting_facility_quantity1
overall_width_across_flats0.430 INCHES NOMINAL IN
terminal_type_and_quantity1 TAB, SOLDER LUG AND 1 THREADED STUD
specification/standard_data81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
power_rating_per_characteristic10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
NSN5961-00-422-0087
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N2979 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
OVERALL DIAMETER: 0.424 INCHES MAXIMUM IN
•
MOUNTING METHOD: THREADED STUD(S)
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM IN
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC15.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY1
OVERALL DIAMETER0.424 INCHES MAXIMUM IN
MOUNTING METHODTHREADED STUD(S)
OVERALL LENGTH0.405 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS0.437 INCHES MAXIMUM IN
NOMINAL THREAD SIZE0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC170.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
SUBSTITUTES & CROSS-REFERENCES 1
RELEASE2986Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1N2979?
1N2979 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1N2979?
There is 1 known substitute for 1N2979: RELEASE2986. Substitute compatibility should be verified for your specific system.
What is the NSN for 1N2979?
1N2979 is cataloged in the U.S. Government catalog under NSN 5961-00-422-0087. This indicates validated use in U.S. government and defense supply chains.
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