The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.405 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.424 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-401-2945, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.405 INCHES MAXIMUM IN |
| mounting_method | THREADED STUD(S) |
| overall_diameter | 0.424 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| nominal_thread_size | 0.190 INCHES IN |
| thread_series_designator | UNF |
| mounting_facility_quantity | 1 |
| overall_width_across_flats | 0.437 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| nondefinitive_spec/std_data | 1N2977B TYPE |
| specification/standard_data | 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION |
| NSN | 5961-00-401-2945 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
| POWER RATING PER CHARACTERISTIC | 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| OVERALL DIAMETER | 0.424 INCHES MAXIMUM IN |
| MATERIAL | SILICON SEMICONDUCTOR |
| MOUNTING METHOD | THREADED STUD(S) |
| MOUNTING FACILITY QUANTITY | 1 |
| VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| CURRENT RATING PER CHARACTERISTIC | 190.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 750.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION |