1N229 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N229: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.125 INCHES NOMINAL IN, overall_diameter: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-752-0180, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N229

NSN: 5961-00-752-0180
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 14552 — MICROSEMI CORPORATION (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.125 INCHES NOMINAL IN
overall_diameter	0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
nondefinitive_spec/std_data	1N229 TYPE
power_rating_per_characteristic	150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	19.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-752-0180

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 19.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC

•

OVERALL DIAMETER: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.125 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	19.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER	0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM IN
TERMINAL LENGTH	1.125 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC	200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
NONDEFINITIVE SPEC/STD DATA	1N229 TYPE
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 1

RELEASE1554Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N229?

1N229 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N229?

There is 1 known substitute for 1N229: RELEASE1554. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N229?

1N229 is cataloged in the U.S. Government catalog under NSN 5961-00-752-0180. This indicates validated use in U.S. government and defense supply chains.

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1N229 — SEMICONDUCTOR DEVICE,DIODE

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