1N228A — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N228A: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.410 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.125 INCHES NOMINAL IN, overall_diameter: 0.220 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-060-1617, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N228A

NSN: 5961-00-060-1617
NIINs: 000601617, 008828685
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 99942 — N A P SMD TECHNOLOGY INC

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.410 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.125 INCHES NOMINAL IN
overall_diameter	0.220 INCHES NOMINAL IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
specification/standard_data	80131-RELEASE3139 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic	150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	200.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
maximum_operating_temp_per_measurement_point	150.0 CELSIUS AMBIENT AIR DEGC
NSN	5961-00-060-1617

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REVERSE VOLTAGE, PEAK

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.220 INCHES NOMINAL IN

•

TERMINAL LENGTH: 1.060 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	18.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.220 INCHES NOMINAL IN
TERMINAL LENGTH	1.060 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.370 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 4

900120-8Reference document

Same NSN cross-reference

Reference document — Design control — primary reference

Z2049Reference document

Same NSN cross-reference

Reference document — Secondary reference

C8188Reference document

Same NSN cross-reference

Reference document — Secondary reference

GZ40513AReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N228A?

1N228A is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N228A?

There are 4 known substitutes for 1N228A: 900120-8, Z2049, C8188 and 1 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N228A?

1N228A is cataloged in the U.S. Government catalog under NSN 5961-00-060-1617. This indicates validated use in U.S. government and defense supply chains.

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1N228A — SEMICONDUCTOR DEVICE,DIODE

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