PartsTable
Technical Data Sheet
Download PDF

1N213 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N213: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.370 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.125 INCHES NOMINAL IN, overall_diameter: 0.230 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-476-9346, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N213
NSN: 5961-00-476-9346
NIINs: 004769346, 005561019
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 99942 — N A P SMD TECHNOLOGY INC
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.370 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length1.125 INCHES NOMINAL IN
overall_diameter0.230 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
specification/standard_data80131-RELEASE1348 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
power_rating_per_characteristic150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic80.0 MAXIMUM REVERSE VOLTAGE, PEAK
maximum_operating_temp_per_measurement_point150.0 CELSIUS AMBIENT AIR DEGC
NSN5961-00-476-9346
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N213 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 82.0 MAXIMUM REVERSE VOLTAGE, PEAK
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS AMBIENT AIR DEGC
•
OVERALL DIAMETER: 0.230 INCHES MAXIMUM IN
•
TERMINAL LENGTH: 1.125 INCHES MINIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC82.0 MAXIMUM REVERSE VOLTAGE, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT150.0 CELSIUS AMBIENT AIR DEGC
OVERALL DIAMETER0.230 INCHES MAXIMUM IN
TERMINAL LENGTH1.125 INCHES MINIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.370 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MATERIALSILICON SEMICONDUCTOR
MATERIALGLASS ENCLOSURE
SUBSTITUTES & CROSS-REFERENCES 1
10658291Same NSN cross-reference
Same NSN cross-reference
Also cataloged under this NSN
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
Ready to buy 1N213?
Compare prices from verified sellers on eBay
Buy on eBay →
As an eBay Partner, PartsTable may earn a commission. Your price is not affected.
FREQUENTLY ASKED QUESTIONS
What is 1N213?
1N213 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1N213?
There is 1 known substitute for 1N213: 10658291. Substitute compatibility should be verified for your specific system.
What is the NSN for 1N213?
1N213 is cataloged in the U.S. Government catalog under NSN 5961-00-476-9346. This indicates validated use in U.S. government and defense supply chains.
Community Feedback
Leave a Comment
Comments are reviewed before appearing. You will receive an email to verify before your comment appears.

Request a Quote — 1N213