1N1198R — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1N1198R: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.375 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), overall_diameter: 0.687 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.250 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-398-1024, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1N1198R

NSN: 5961-00-398-1024
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 58849 — FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.375 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
overall_diameter	0.687 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.250 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
terminal_type_and_quantity	1 THREADED STUD AND 1 TAB, SOLDER LUG
power_rating_per_characteristic	30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
voltage_rating_in_volts_per_characteristic	600.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
NSN	5961-00-398-1024

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 0.687 INCHES MAXIMUM IN

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

NOMINAL THREAD SIZE: 0.250 INCHES IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	600.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	190.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	0.687 INCHES MAXIMUM IN
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	0.375 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
NOMINAL THREAD SIZE	0.250 INCHES IN
CURRENT RATING PER CHARACTERISTIC	20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MATERIAL	SILICON SEMICONDUCTOR

SUBSTITUTES & CROSS-REFERENCES 2

1N1198RAReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

850-72604-50Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1N1198R?

1N1198R is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1N1198R?

There are 2 known substitutes for 1N1198R: 1N1198RA, 850-72604-50. Substitute compatibility should be verified for your specific system.

What is the NSN for 1N1198R?

1N1198R is cataloged in the U.S. Government catalog under NSN 5961-00-398-1024. This indicates validated use in U.S. government and defense supply chains.

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1N1198R — SEMICONDUCTOR DEVICE,DIODE

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