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1N1130 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1N1130: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.405 INCHES NOMINAL IN, mounting_method: THREADED STUD(S), overall_diameter: 0.424 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-491-2121, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1N1130
NSN: 5961-00-491-2121
NIINs: 004912121, 005535429, 008084741, 011219506
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 51182 — DIODES INC (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.405 INCHES NOMINAL IN
mounting_methodTHREADED STUD(S)
overall_diameter0.424 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
nominal_thread_size0.190 INCHES IN
end_item_identificationHULL OBRP; RADAR, SEARCH, AN/SPS-52
thread_series_designatorUNF
mounting_facility_quantity1
overall_width_across_flats0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
terminal_type_and_quantity1 THREADED STUD AND 1 TAB, SOLDER LUG
specification/standard_data81349-MIL-S-19500/259 GOVERNMENT SPECIFICATION
NSN5961-00-491-2121
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1N1130 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS CASE DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
OVERALL DIAMETER: 0.424 INCHES MAXIMUM IN
•
MOUNTING METHOD: THREADED STUD(S)
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC1500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY1
OVERALL DIAMETER0.424 INCHES MAXIMUM IN
MOUNTING METHODTHREADED STUD(S)
OVERALL LENGTH1.253 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
NOMINAL THREAD SIZE0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC1.500 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
SUBSTITUTES & CROSS-REFERENCES 1
ED9525Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Terminal item — stock exhausted; no further procurementNo demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1N1130?
1N1130 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1N1130?
There is 1 known substitute for 1N1130: ED9525. Substitute compatibility should be verified for your specific system.
What is the NSN for 1N1130?
1N1130 is cataloged in the U.S. Government catalog under NSN 5961-00-491-2121. This indicates validated use in U.S. government and defense supply chains.
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