1AB096500001 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1AB096500001: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.260 INCHES MAXIMUM IN, mounting_method: TERMINAL, overall_diameter: 0.120 INCHES MAXIMUM IN, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, function_for_which_designed: RECTIFIER. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-349-3247, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1AB096500001

NSN: 5961-01-349-3247
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: F6180 — NOKIA NETWORKS FRANCE (FRA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.260 INCHES MAXIMUM IN
mounting_method	TERMINAL
overall_diameter	0.120 INCHES MAXIMUM IN
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
function_for_which_designed	RECTIFIER
current_rating_per_characteristic	35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
voltage_rating_in_volts_per_characteristic	400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
maximum_operating_temp_per_measurement_point	175.0 CELSIUS JUNCTION DEGC
NSN	5961-01-349-3247

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.120 INCHES MAXIMUM IN

•

MOUNTING METHOD: TERMINAL

•

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT

•

FUNCTION FOR WHICH DESIGNED: RECTIFIER

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	175.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.120 INCHES MAXIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.260 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED	RECTIFIER
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 2

MUR140Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

1901-1244Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1AB096500001?

1AB096500001 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 1AB096500001?

There are 2 known substitutes for 1AB096500001: MUR140, 1901-1244. Substitute compatibility should be verified for your specific system.

What is the NSN for 1AB096500001?

1AB096500001 is cataloged in the U.S. Government catalog under NSN 5961-01-349-3247. This indicates validated use in U.S. government and defense supply chains.

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