1990-0806: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.245 INCHES MAXIMUM IN, overall_height: 0.198 INCHES NOMINAL IN, overall_length: 0.396 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.123 INCHES NOMINAL IN. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-261-4008, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.245 INCHES MAXIMUM IN |
| overall_height | 0.198 INCHES NOMINAL IN |
| overall_length | 0.396 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| terminal_length | 0.123 INCHES NOMINAL IN |
| lens_transparency | TRANSLUCENT |
| luminous_intensity | 11.6 MILLICANDELA NOMINAL |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 2 PIN |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| NSN | 5980-01-261-4008 |
| OVERALL HEIGHT | 0.198 INCHES NOMINAL IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.6 MAXIMUM FORWARD VOLTAGE, DC |
| TERMINAL LENGTH | 0.123 INCHES NOMINAL IN |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 11.6 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.396 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| OVERALL WIDTH | 0.245 INCHES MAXIMUM IN |