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1901-1085 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1901-1085: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN, special_features: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-082-1995, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1901-1085
NSN: 5961-01-082-1995
NIINs: 010821995, 011004933
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 50434 — AVAGO TECHNOLOGIES US INC DIV AVAGO TECHNOLOGIES (USA)
SPECIFICATIONS
materialSILICON SEMICONDUCTOR
overall_length0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
mounting_methodTERMINAL
terminal_length1.000 INCHES MINIMUM IN
overall_diameter0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
special_featuresMINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: PN
features_providedHERMETICALLY SEALED CASE
terminal_type_and_quantity2 UNINSULATED WIRE LEAD
power_rating_per_characteristic150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic100.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
voltage_rating_in_volts_per_characteristic5.0 MAXIMUM BREAKDOWN VOLTAGE, DC
NSN5961-01-082-1995
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1901-1085 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
•
OVERALL DIAMETER: 0.076 INCHES MAXIMUM IN
•
MOUNTING METHOD: TERMINAL
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
MATERIAL: SILICON SEMICONDUCTOR
•
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC5.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
OVERALL DIAMETER0.076 INCHES MAXIMUM IN
MOUNTING METHODTERMINAL
OVERALL LENGTH0.170 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
MATERIALSILICON SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
SUBSTITUTES & CROSS-REFERENCES 1
5082-5503Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1901-1085?
1901-1085 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1901-1085?
There is 1 known substitute for 1901-1085: 5082-5503. Substitute compatibility should be verified for your specific system.
What is the NSN for 1901-1085?
1901-1085 is cataloged in the U.S. Government catalog under NSN 5961-01-082-1995. This indicates validated use in U.S. government and defense supply chains.
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