1877AS328-1: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM MM, overall_height: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM MM, overall_length: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM MM, mounting_method: TERMINAL, terminal_length: 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM MM. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-381-7869, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM MM |
| overall_height | 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM MM |
| overall_length | 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM MM |
| mounting_method | TERMINAL |
| terminal_length | 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM MM |
| internal_configuration | FIELD EFFECT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 PIN |
| power_rating_per_characteristic | 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| current_rating_per_characteristic | 25.00 AMPERES MAXIMUM DRAIN CURRENT |
| voltage_rating_in_volts_per_characteristic | 80.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| NSN | 5961-01-381-7869 |
| OVERALL HEIGHT | 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM MM |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220AB |
| TERMINAL LENGTH | 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM MM |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM MM |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| OVERALL WIDTH | 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM MM |
| CURRENT RATING PER CHARACTERISTIC | 25.00 AMPERES MAXIMUM DRAIN CURRENT |