186352-8 — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

186352-8: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 38.0 MILLIMETERS NOMINAL MM, mounting_method: THREADED STUD(S), overall_diameter: 8.5 MILLIMETERS NOMINAL MM, features_provided: MOUNTING HARDWARE, lens_transparency: TRANSLUCENT. This part is cataloged in the U.S.

Government catalog under NSN 5980-01-328-5487, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

186352-8

NSN: 5980-01-328-5487
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 37695 — RAYTHEON COMPANY (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	38.0 MILLIMETERS NOMINAL MM
mounting_method	THREADED STUD(S)
overall_diameter	8.5 MILLIMETERS NOMINAL MM
features_provided	MOUNTING HARDWARE
lens_transparency	TRANSLUCENT
luminous_intensity	1.2 MILLICANDELA NOMINAL
nominal_thread_size	8.0 MILLIMETERS MM
internal_configuration	POINT CONTACT
semiconductor_material	GALLIUM ARSENIDE PHOSPHIDE
end_item_identification	RADIO SET AN/GRC-XXX
thread_series_designator	ISO M
NSN	5980-01-328-5487

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 NOMINAL FORWARD VOLTAGE, DC

•

MOUNTING FACILITY QUANTITY: 1

•

OVERALL DIAMETER: 8.5 MILLIMETERS NOMINAL MM

•

THREAD PITCH IN MILLIMETERS: 1.00

•

MOUNTING METHOD: THREADED STUD(S)

•

INTERNAL JUNCTION CONFIGURATION: PN

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE

•

LUMINOUS INTENSITY: 1.2 MILLICANDELA NOMINAL

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	2.0 NOMINAL FORWARD VOLTAGE, DC
MOUNTING FACILITY QUANTITY	1
OVERALL DIAMETER	8.5 MILLIMETERS NOMINAL MM
THREAD PITCH IN MILLIMETERS	1.00
MOUNTING METHOD	THREADED STUD(S)
INTERNAL JUNCTION CONFIGURATION	PN
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE PHOSPHIDE
LUMINOUS INTENSITY	1.2 MILLICANDELA NOMINAL
OVERALL LENGTH	38.0 MILLIMETERS NOMINAL MM
INTERNAL CONFIGURATION	POINT CONTACT

OTHER ITEMS IN FSC 5980 — Optoelectronic Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5980-00-005-9850 5980-00-007-7654 5980-00-008-5173 5980-00-009-3039 5980-00-010-1721 5980-00-019-1445 5980-00-027-8087 5980-00-028-3463

SUBSTITUTES & CROSS-REFERENCES 1

8K596-3502001-110Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — critical (Q)

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FREQUENTLY ASKED QUESTIONS

What is 186352-8?

186352-8 is a LIGHT EMITTING DIODE.

What parts can replace 186352-8?

There is 1 known substitute for 186352-8: 8K596-3502001-110. Substitute compatibility should be verified for your specific system.

What is the NSN for 186352-8?

186352-8 is cataloged in the U.S. Government catalog under NSN 5980-01-328-5487. This indicates validated use in U.S. government and defense supply chains.

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186352-8 — LIGHT EMITTING DIODE

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