186318-4: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include overall_length: 0.500 INCHES NOMINAL IN, mounting_method: SLOT, overall_diameter: 0.285 INCHES NOMINAL IN, lens_transparency: TRANSPARENT, luminous_intensity: 2.0 MILLICANDELA NOMINAL, internal_configuration: POINT CONTACT. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-206-2865, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.500 INCHES NOMINAL IN |
| mounting_method | SLOT |
| overall_diameter | 0.285 INCHES NOMINAL IN |
| lens_transparency | TRANSPARENT |
| luminous_intensity | 2.0 MILLICANDELA NOMINAL |
| internal_configuration | POINT CONTACT |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| mounting_facility_quantity | 1 |
| terminal_type_and_quantity | 1 FLANGE AND 1 CASE |
| color_tone_produced_per_source | CLEAR LENS |
| internal_junction_configuration | PN |
| current_rating_per_characteristic | 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| NSN | 5980-01-206-2865 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM FORWARD VOLTAGE, DC |
| MOUNTING FACILITY QUANTITY | 1 |
| OVERALL DIAMETER | 0.285 INCHES NOMINAL IN |
| MOUNTING METHOD | SLOT |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 2.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.500 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |