The TRANSISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.205 INCHES MAXIMUM IN, overall_height: 0.165 INCHES MAXIMUM IN, overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-226-5968, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_width | 0.205 INCHES MAXIMUM IN |
| overall_height | 0.165 INCHES MAXIMUM IN |
| overall_length | 0.210 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| specification/standard_data | 80131-RELEASE4945 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| power_rating_per_characteristic | 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| NSN | 5961-00-226-5968 |
| POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| OVERALL WIDTH | 0.205 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| MOUNTING METHOD | TERMINAL |
| OVERALL HEIGHT | 0.165 INCHES MAXIMUM IN |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| SEMICONDUCTOR MATERIAL | SILICON |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM IN |