167-626: SEMICONDUCTOR DEVICE,THYRISTOR.
The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.605 INCHES MAXIMUM IN, mounting_method: PRESS FIT, overall_diameter: 1.900 INCHES MAXIMUM IN, semiconductor_material: SILICON, terminal_type_and_quantity: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 CASE, power_rating_per_characteristic: 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION. This part is cataloged in the U.S.
Government catalog under NSN 5999-00-152-3997, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.605 INCHES MAXIMUM IN |
| mounting_method | PRESS FIT |
| overall_diameter | 1.900 INCHES MAXIMUM IN |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 2 CASE |
| power_rating_per_characteristic | 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION |
| current_rating_per_characteristic | 225.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1600.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE |
| maximum_operating_temp_per_measurement_point | 125.0 CELSIUS JUNCTION DEGC |
| NSN | 5999-00-152-3997 |
| PIN DIAMETER | 0.063 INCHES NOMINAL IN |
| SURFACE TREATMENT DOCUMENT AND CLASSIFICATION | MIL-G-45204,TY 2,CL 1 MIL SPEC SINGLE TREATMENT RESPONSE BODY |
| OVERALL DIAMETER | 0.101 INCHES NOMINAL IN |
| PRECIOUS MATERIAL | GOLD |
| MOUNTING METHOD | SPRING TENSION |
| STYLE DESIGNATOR | SOCKET INSERT CONTACT |
| PRECIOUS MATERIAL AND WEIGHT | 0.005 GOLD GRAINS, TROY |
| OVERALL LENGTH | 0.710 INCHES NOMINAL IN |
| SURFACE TREATMENT | GOLD BODY |
| PRECIOUS MATERIAL AND LOCATION | EXTERNAL SURFACE GOLD |