1668AS4D3-1: SEMICONDUCTOR DEVICES,UNITIZED.
The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_width: 1.024 INCHES MAXIMUM IN, overall_height: 1.181 INCHES MAXIMUM IN, overall_length: 3.681 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), terminal_type_and_quantity: 3 SCREW AND 4 TAB, SOLDER LUG. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-362-8403, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_width | 1.024 INCHES MAXIMUM IN |
| overall_height | 1.181 INCHES MAXIMUM IN |
| overall_length | 3.681 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 3 SCREW AND 4 TAB, SOLDER LUG |
| component_name_and_quantity | 2 SEMICONDUCTOR DEVICE DIODE |
| function_for_which_designed | SWITCHING |
| power_rating_per_characteristic | 0.5 WATTS NOMINAL AVERAGE GATE POWER DISSIPATION AND 5.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION ALL SEMICONDUCTOR |
| current_rating_per_characteristic | 86.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 1100.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT AND 2.00 AMPERES NOMINAL FORWARD GATE CURRENT ALL SEMICONDUCTOR |
| NSN | 5961-01-362-8403 |
| OVERALL HEIGHT | 1.181 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1200.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 1350.0 NOMINAL NONREPETITIVE PEAK OFF-STATE VOLTAGE AND 960.0 NOMINAL OFF-STATE VOLTAGE, DC AND 1200.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 1350.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 960.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS AND 10.0 NOMINAL GATE VOLTAGE, DC ALL SEMICONDUCTOR |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| OVERALL LENGTH | 3.681 INCHES MAXIMUM IN |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| OVERALL WIDTH | 1.024 INCHES MAXIMUM IN |
| CURRENT RATING PER CHARACTERISTIC | 86.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS AND 1100.00 AMPERES NOMINAL PEAK NONREPETITIVE SURGE CURRENT AND 2.00 AMPERES NOMINAL FORWARD GATE CURRENT ALL SEMICONDUCTOR |
| FUNCTION FOR WHICH DESIGNED | SWITCHING |
| MATERIAL | GLASS ENCLOSURE |