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160 3646 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

160 3646: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include width: 35.0 MILLIMETERS NOMINAL MM, material: PLASTIC CELLULOSE ACETATE, film_type: STILL PICTURE, base_color: CLEAR, usage_form: ROLL, film_subtype: CAMERA. This part is cataloged in the U.S.

Government catalog under NSN 5961-00-409-1404, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
160 3646
NSN: 5961-00-409-1404
NIINs: 004091404, 010381726
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 56232 — LOCKHEED MARTIN CORPORATION DIV RMS - MITCHEL FIELD (USA)
SPECIFICATIONS
width35.0 MILLIMETERS NOMINAL MM
materialPLASTIC CELLULOSE ACETATE
film_typeSTILL PICTURE
base_colorCLEAR
usage_formROLL
film_subtypeCAMERA
emulsion_typeCOLOR
exposure_index64 INTERNATIONAL ORGANIZATION FOR STANDARDIZATION TUNGSTEN
overall_length0.535 INCHES MAXIMUM IN
mounting_methodTHREADED STUD(S)
size_designator135
special_featuresINTERNAL JUNCTION CONFIGURATION ARRANGEMENT PNPN
NSN5961-00-409-1404
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 160 3646 MFR OEM SEMICONDUCTOR DEVICE,THYRISTOR
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKOVER VOLTAGE, DC
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 CELSIUS JUNCTION DEGC
•
MOUNTING FACILITY QUANTITY: 1
•
MOUNTING METHOD: THREADED STUD(S)
•
SEMICONDUCTOR MATERIAL: SILICON
•
INTERNAL CONFIGURATION: JUNCTION CONTACT
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
TECHNICAL CHARACTERISTICS
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKOVER VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY1
MOUNTING METHODTHREADED STUD(S)
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH0.535 INCHES MAXIMUM IN
INTERNAL CONFIGURATIONJUNCTION CONTACT
FEATURES PROVIDEDHERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS0.652 INCHES MAXIMUM IN
NOMINAL THREAD SIZE0.250 INCHES IN
SUBSTITUTES & CROSS-REFERENCES 2
MCR3918-1GPATESTReference document
Same NSN cross-reference
Reference document — Secondary reference
MCR2918-1Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 160 3646?
160 3646 is a SEMICONDUCTOR DEVICE,THYRISTOR.
What parts can replace 160 3646?
There are 2 known substitutes for 160 3646: MCR3918-1GPATEST, MCR2918-1. Substitute compatibility should be verified for your specific system.
What is the NSN for 160 3646?
160 3646 is cataloged in the U.S. Government catalog under NSN 5961-00-409-1404. This indicates validated use in U.S. government and defense supply chains.
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