150C30B — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

150C30B: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include overall_length: 3.625 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: JUNCTION PATTERN ARRANGEMENT: PNPN, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.750 INCHES IN, internal_configuration: JUNCTION CONTACT. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-042-0418, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

150C30B

NSN: 5961-01-042-0418
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 59377 — MICROSEMI CORP-COLORADO (USA)

SPECIFICATIONS

overall_length	3.625 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	JUNCTION PATTERN ARRANGEMENT: PNPN
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.750 INCHES IN
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	1.218 INCHES MINIMUM AND 1.250 INCHES MAXIMUM IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD W/TERMINAL LUG
power_rating_per_characteristic	10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
NSN	5961-01-042-0418

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 0.3 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 400.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: JUNCTION CONTACT

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	3.0 MAXIMUM GATE TRIGGER VOLTAGE, DC AND 0.3 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 400.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	3.625 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	1.218 INCHES MINIMUM AND 1.250 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.750 INCHES IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 150C30B?

150C30B is a SEMICONDUCTOR DEVICE,THYRISTOR.

What is the NSN for 150C30B?

150C30B is cataloged in the U.S. Government catalog under NSN 5961-01-042-0418. This indicates validated use in U.S. government and defense supply chains.

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150C30B — SEMICONDUCTOR DEVICE,THYRISTOR

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