150-1000-00 — LIGHT EMITTING DIODE

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

150-1000-00: LIGHT EMITTING DIODE.

The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, mounting_method: TERMINAL, internal_configuration: POINT CONTACT, semiconductor_material: GALLIUM ARSENIDE PHOSPHIDE, terminal_type_and_quantity: 2 UNINSULATED WIRE LEAD, internal_junction_configuration: PN. This part is cataloged in the U.S.

Government catalog under NSN 5980-00-148-4459, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

150-1000-00

NSN: 5980-00-148-4459
FSC: 5980 — Optoelectronic Devices and Associated Hardware
CAGE: 80009 — TEKTRONIX, INC. (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
mounting_method	TERMINAL
internal_configuration	POINT CONTACT
semiconductor_material	GALLIUM ARSENIDE PHOSPHIDE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
internal_junction_configuration	PN
power_rating_per_characteristic	80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
current_rating_per_characteristic	40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
voltage_rating_in_volts_per_characteristic	3.0 MAXIMUM REVERSE VOLTAGE, DC
NSN	5980-00-148-4459

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

•

MOUNTING METHOD: TERMINAL

•

INTERNAL JUNCTION CONFIGURATION: PN

•

SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE

•

INTERNAL CONFIGURATION: POINT CONTACT

•

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC

•

MATERIAL: PLASTIC ENCLOSURE

•

TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	3.0 MAXIMUM REVERSE VOLTAGE, DC
MOUNTING METHOD	TERMINAL
INTERNAL JUNCTION CONFIGURATION	PN
SEMICONDUCTOR MATERIAL	GALLIUM ARSENIDE PHOSPHIDE
INTERNAL CONFIGURATION	POINT CONTACT
CURRENT RATING PER CHARACTERISTIC	40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD
POWER RATING PER CHARACTERISTIC	80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION

SUBSTITUTES & CROSS-REFERENCES 6

1990-0323Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

MV50Reference document

Same NSN cross-reference

Reference document — Secondary reference

MV50AReference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

13-808706-2Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

353-2069-010Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

RED LITE 50-30Reference document

Same NSN cross-reference

Reference document — Replaced / superseded reference

LIFECYCLE

NSN statusCancelled· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 150-1000-00?

150-1000-00 is a LIGHT EMITTING DIODE.

What parts can replace 150-1000-00?

There are 6 known substitutes for 150-1000-00: 1990-0323, MV50, MV50A and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 150-1000-00?

150-1000-00 is cataloged in the U.S. Government catalog under NSN 5980-00-148-4459. This indicates validated use in U.S. government and defense supply chains.

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