The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 0.700 INCHES MAXIMUM IN, overall_height: 0.340 INCHES MAXIMUM IN, overall_length: 1.252 INCHES MAXIMUM IN, transfer_ratio: 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-813-5111, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_width | 0.700 INCHES MAXIMUM IN |
| overall_height | 0.340 INCHES MAXIMUM IN |
| overall_length | 1.252 INCHES MAXIMUM IN |
| transfer_ratio | 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| mounting_method | UNTHREADED HOLE(S) |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 PIN AND 1 CASE |
| power_rating_per_characteristic | 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| NSN | 5961-00-813-5111 |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| CURRENT RATING PER CHARACTERISTIC | 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC |
| TRANSFER RATIO | 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| POWER RATING PER CHARACTERISTIC | 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |