13038661 — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

13038661: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.190 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES NOMINAL IN, overall_diameter: 0.220 INCHES NOMINAL IN, internal_configuration: FIELD EFFECT-DUAL GATE, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-183-0797, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

13038661

NSN: 5961-01-183-0797
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 18876 — US ARMY AVIATION AND MISSILE COMMAND (USA)

SPECIFICATIONS

overall_length	0.190 INCHES NOMINAL IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES NOMINAL IN
overall_diameter	0.220 INCHES NOMINAL IN
internal_configuration	FIELD EFFECT-DUAL GATE
semiconductor_material	SILICON
terminal_circle_diameter	0.018 INCHES NOMINAL IN
terminal_type_and_quantity	6 TAB W/WIRE LEAD
power_rating_per_characteristic	400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic	20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
maximum_operating_temp_per_measurement_point	200.0 CELSIUS JUNCTION DEGC
NSN	5961-01-183-0797

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.220 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.220 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.190 INCHES NOMINAL IN
INTERNAL CONFIGURATION	FIELD EFFECT-DUAL GATE
TERMINAL TYPE AND QUANTITY	6 TAB W/WIRE LEAD
TERMINAL CIRCLE DIAMETER	0.018 INCHES NOMINAL IN

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES

No substitute or cross-reference records for this part.

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 13038661?

13038661 is a TRANSISTOR.

What is the NSN for 13038661?

13038661 is cataloged in the U.S. Government catalog under NSN 5961-01-183-0797. This indicates validated use in U.S. government and defense supply chains.

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13038661 — TRANSISTOR

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