13038452: TRANSISTOR.
The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.190 INCHES NOMINAL IN, mounting_method: PRESS FIT, terminal_length: 0.500 INCHES NOMINAL IN, overall_diameter: 0.220 INCHES NOMINAL IN, internal_configuration: FIELD EFFECT-DUAL GATE, semiconductor_material: SILICON. This part is cataloged in the U.S.
Government catalog under NSN 5961-01-213-0589, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.190 INCHES NOMINAL IN |
| mounting_method | PRESS FIT |
| terminal_length | 0.500 INCHES NOMINAL IN |
| overall_diameter | 0.220 INCHES NOMINAL IN |
| internal_configuration | FIELD EFFECT-DUAL GATE |
| semiconductor_material | SILICON |
| terminal_circle_diameter | 0.018 INCHES NOMINAL IN |
| terminal_type_and_quantity | 4 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| voltage_rating_in_volts_per_characteristic | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| maximum_operating_temp_per_measurement_point | 200.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-213-0589 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL IN |
| TERMINAL LENGTH | 0.500 INCHES NOMINAL IN |
| MOUNTING METHOD | PRESS FIT |
| SEMICONDUCTOR MATERIAL | SILICON |
| OVERALL LENGTH | 0.190 INCHES NOMINAL IN |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| TERMINAL CIRCLE DIAMETER | 0.018 INCHES NOMINAL IN |