12FL100S — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

12FL100S: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.405 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), special_features: FWD POLARITY, features_provided: HERMETICALLY SEALED CASE, nominal_thread_size: 0.190 INCHES IN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-034-8379, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

12FL100S

NSN: 5961-01-034-8379
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 59993 — INTERNATIONAL RECTIFIER CORPORATION (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.405 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
special_features	FWD POLARITY
features_provided	HERMETICALLY SEALED CASE
nominal_thread_size	0.190 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.429 INCHES MINIMUM AND 0.434 INCHES MAXIMUM IN
terminal_type_and_quantity	1 THREADED STUD AND 1 TAB, SOLDER LUG
current_rating_per_characteristic	12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
voltage_rating_in_volts_per_characteristic	1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
NSN	5961-01-034-8379

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

OVERALL WIDTH ACROSS FLATS: 0.429 INCHES MINIMUM AND 0.434 INCHES MAXIMUM IN

•

NOMINAL THREAD SIZE: 0.190 INCHES IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	0.405 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
OVERALL WIDTH ACROSS FLATS	0.429 INCHES MINIMUM AND 0.434 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC	12.00 AMPERES MAXIMUM FORWARD CURRENT, DC
SPECIAL FEATURES	FWD POLARITY

SUBSTITUTES & CROSS-REFERENCES 6

R3101006Reference document

Same NSN cross-reference

Reference document — Secondary reference

91616869Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

12FL100S05Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

12FT80Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

12FT100Reference document

Same NSN cross-reference

Reference document — Secondary reference

12FLR100S05Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 12FL100S?

12FL100S is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 12FL100S?

There are 6 known substitutes for 12FL100S: R3101006, 91616869, 12FL100S05 and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 12FL100S?

12FL100S is cataloged in the U.S. Government catalog under NSN 5961-01-034-8379. This indicates validated use in U.S. government and defense supply chains.

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12FL100S — SEMICONDUCTOR DEVICE,DIODE

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