1264-540 — SEMICONDUCTOR DEVICE,PHOTO

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1264-540: SEMICONDUCTOR DEVICE,PHOTO.

The SEMICONDUCTOR DEVICE,PHOTO is a the manufacturer industrial component. Key specifications include material: PLASTIC CROSS LINKED POLYETHYLENE FIRST POSITION PRIMARY INSULATION ALL CONDUCTORS, overall_length: 0.235 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.219 INCHES NOMINAL IN, surface_treatment: TIN CORE CONDUCTOR ALL CONDUCTORS. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-358-8557, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1264-540

NSN: 5961-01-358-8557
NIINs: 013588557, 015303420
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 72314 — BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC. (USA)

SPECIFICATIONS

material	PLASTIC CROSS LINKED POLYETHYLENE FIRST POSITION PRIMARY INSULATION ALL CONDUCTORS
overall_length	0.235 INCHES NOMINAL IN
branch_quantity	5
mounting_method	TERMINAL
terminal_length	0.500 INCHES MINIMUM IN
overall_diameter	0.219 INCHES NOMINAL IN
surface_treatment	TIN CORE CONDUCTOR ALL CONDUCTORS
conductor_quantity	5
semiconductor_material	SILICON
end_item_identification	8S-842/G
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
NSN	5961-01-358-8557

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

•

OVERALL DIAMETER: 0.219 INCHES NOMINAL IN

•

TERMINAL LENGTH: 0.500 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 100.00 NANOAMPERES MAXIMUM DARK CURRENT

•

FUNCTION FOR WHICH DESIGNED: PHOTOTRANSISTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	30.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
OVERALL DIAMETER	0.219 INCHES NOMINAL IN
TERMINAL LENGTH	0.500 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.235 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	100.00 NANOAMPERES MAXIMUM DARK CURRENT
FUNCTION FOR WHICH DESIGNED	PHOTOTRANSISTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 1

SPX4773Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1264-540?

1264-540 is a SEMICONDUCTOR DEVICE,PHOTO.

What parts can replace 1264-540?

There is 1 known substitute for 1264-540: SPX4773. Substitute compatibility should be verified for your specific system.

What is the NSN for 1264-540?

1264-540 is cataloged in the U.S. Government catalog under NSN 5961-01-358-8557. This indicates validated use in U.S. government and defense supply chains.

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1264-540 — SEMICONDUCTOR DEVICE,PHOTO

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