The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.100 INCHES MINIMUM AND 0.128 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-247-6368, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.100 INCHES MINIMUM AND 0.128 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| specification/standard_data | 80131-RELEASE5107 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| current_rating_per_characteristic | 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE |
| voltage_rating_in_volts_per_characteristic | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-00-247-6368 |
| CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| OVERALL LENGTH | 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| OVERALL DIAMETER | 0.100 INCHES MINIMUM AND 0.128 INCHES MAXIMUM IN |
| MOUNTING METHOD | TERMINAL |
| MATERIAL | GLASS ENCLOSURE |
| MATERIAL | SILICON SEMICONDUCTOR |