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1133182G1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited
— · SFP TRANSCEIVER
PRODUCT OVERVIEW

1133182G1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include overall_width: 0.220 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN, overall_height: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN, overall_length: 0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON, current_rating_per_characteristic: 525.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-061-5950, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS
1133182G1
NSN: 5961-01-061-5950
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 28528 — ITT INDUSTRIES INC ITT AEROSPACE COMMUNICATIONS DIV EAST (USA)
SPECIFICATIONS
overall_width0.220 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
overall_height0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
overall_length0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM IN
features_providedHERMETICALLY SEALED CASE
semiconductor_materialSILICON
current_rating_per_characteristic525.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
voltage_rating_in_volts_per_characteristic50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
maximum_operating_temp_per_measurement_point200.0 CELSIUS AMBIENT AIR DEGC
NSN5961-01-061-5950
COMPONENT DIAGRAM
BAIL LATCH 10G SFP+ 850nm · SR (MMF, 300m) DOM: Digital Optical Monitoring TX RX LC DUPLEX 20-PIN EDGE CONNECTOR ~56.5 mm ~13.4mm SFP+ TRANSCEIVER | 10G | 850nm | SR (MMF, 300m) Hot-swappable | LC duplex fiber | DDM/DOM supported TITLE SFP+ XCVR PN 1133182G1 MFR OEM SEMICONDUCTOR DEVICE,DIODE
KEY FEATURES
•
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
•
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS AMBIENT AIR DEGC
•
SEMICONDUCTOR MATERIAL: SILICON
•
FEATURES PROVIDED: HERMETICALLY SEALED CASE
•
CURRENT RATING PER CHARACTERISTIC: 525.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
TECHNICAL CHARACTERISTICS
OVERALL HEIGHT0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 CELSIUS AMBIENT AIR DEGC
SEMICONDUCTOR MATERIALSILICON
OVERALL LENGTH0.790 INCHES MINIMUM AND 0.810 INCHES MAXIMUM IN
OVERALL WIDTH0.220 INCHES MINIMUM AND 0.260 INCHES MAXIMUM IN
FEATURES PROVIDEDHERMETICALLY SEALED CASE
CURRENT RATING PER CHARACTERISTIC525.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
SUBSTITUTES & CROSS-REFERENCES 2
80195Reference document
Same NSN cross-reference
Reference document — Secondary reference
TRW-53601Reference document
Same NSN cross-reference
Reference document — Secondary reference
LIFECYCLE
NSN statusActive· U.S. Government catalog
Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required
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FREQUENTLY ASKED QUESTIONS
What is 1133182G1?
1133182G1 is a SEMICONDUCTOR DEVICE,DIODE.
What parts can replace 1133182G1?
There are 2 known substitutes for 1133182G1: 80195, TRW-53601. Substitute compatibility should be verified for your specific system.
What is the NSN for 1133182G1?
1133182G1 is cataloged in the U.S. Government catalog under NSN 5961-01-061-5950. This indicates validated use in U.S. government and defense supply chains.
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