110-507-8 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

110-507-8: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.210 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES NOMINAL IN, overall_diameter: 0.205 INCHES MAXIMUM IN, semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-019-8772, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

110-507-8

NSN: 5961-01-019-8772
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1HAR9 — ASCO POWER SERVICES INC DBA ASCO EMERGENCY POWER MAINTENANCE INCORPORATED (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_length	0.210 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	0.500 INCHES NOMINAL IN
overall_diameter	0.205 INCHES MAXIMUM IN
semiconductor_material	SILICON
terminal_circle_diameter	0.100 INCHES NOMINAL IN
terminal_type_and_quantity	3 UNINSULATED WIRE LEAD
current_rating_per_characteristic	800.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
voltage_rating_in_volts_per_characteristic	60.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
NSN	5961-01-019-8772

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.205 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 0.500 INCHES NOMINAL IN

•

MOUNTING METHOD: TERMINAL

•

SEMICONDUCTOR MATERIAL: SILICON

•

CURRENT RATING PER CHARACTERISTIC: 800.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.205 INCHES MAXIMUM IN
TERMINAL LENGTH	0.500 INCHES NOMINAL IN
MOUNTING METHOD	TERMINAL
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.210 INCHES MAXIMUM IN
CURRENT RATING PER CHARACTERISTIC	800.00 AMPERES NOMINAL ON-STATE CURRENT, INSTANTANEOUS
MATERIAL	PLASTIC ENCLOSURE
TERMINAL TYPE AND QUANTITY	3 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 2

JHP133-832Reference document

Same NSN cross-reference

Reference document — Secondary reference

C103YYReference document

Same NSN cross-reference

Reference document — Design control — primary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 110-507-8?

110-507-8 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 110-507-8?

There are 2 known substitutes for 110-507-8: JHP133-832, C103YY. Substitute compatibility should be verified for your specific system.

What is the NSN for 110-507-8?

110-507-8 is cataloged in the U.S. Government catalog under NSN 5961-01-019-8772. This indicates validated use in U.S. government and defense supply chains.

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110-507-8 — SEMICONDUCTOR DEVICE,THYRISTOR

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