110-064-008: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.650 INCHES NOMINAL IN, mounting_method: PRESS FIT, overall_diameter: 0.280 INCHES NOMINAL IN, lens_transparency: TRANSPARENT, luminous_intensity: 80.0 MILLICANDELA NOMINAL. This part is cataloged in the U.S.
Government catalog under NSN 5980-01-532-0537, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.650 INCHES NOMINAL IN |
| mounting_method | PRESS FIT |
| overall_diameter | 0.280 INCHES NOMINAL IN |
| lens_transparency | TRANSPARENT |
| luminous_intensity | 80.0 MILLICANDELA NOMINAL |
| semiconductor_material | GALLIUM ARSENIDE PHOSPHIDE |
| terminal_type_and_quantity | 1 BONDING PAD AND 1 CASE |
| function_for_which_designed | VISIBLE LIGHT EMITTING |
| color_tone_produced_per_source | GREEN SEMICONDUCTOR |
| power_rating_per_characteristic | 135.0 MILLIWATTS MAXIMUM PEAK ON-STATE POWER DISSIPATION |
| part_name_assigned_by_controlling_agency | LED SUPER BRIGHT |
| NSN | 5980-01-532-0537 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM FORWARD VOLTAGE, DC |
| OVERALL DIAMETER | 0.280 INCHES NOMINAL IN |
| MOUNTING METHOD | PRESS FIT |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 80.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.650 INCHES NOMINAL IN |
| FUNCTION FOR WHICH DESIGNED | VISIBLE LIGHT EMITTING |
| LENS TRANSPARENCY | TRANSPARENT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | LED SUPER BRIGHT |
| MATERIAL | PLASTIC ENCLOSURE |