The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.107 INCHES MAXIMUM IN, special_test_features: TESTED PER BASE TEN SYSTEMS DWG 21917. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-169-4692, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM IN |
| overall_diameter | 0.107 INCHES MAXIMUM IN |
| special_test_features | TESTED PER BASE TEN SYSTEMS DWG 21917 |
| terminal_circle_diameter | 0.022 INCHES MAXIMUM IN |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| voltage_tolerance_in_percent | -10.0 TO 10.0 |
| power_rating_per_characteristic | 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| current_rating_per_characteristic | 20.00 MILLIAMPERES NOMINAL MAXIMUM REVERSE SURGE CURRENT |
| voltage_rating_in_volts_per_characteristic | 5.1 NOMINAL REGULATOR VOLTAGE, DC |
| NSN | 5961-01-169-4692 |
| SPECIAL TEST FEATURES | TESTED PER BASE TEN SYSTEMS DWG 21917 |
| MATERIAL | PLASTIC ENCLOSURE |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM IN |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM IN |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION DEGC |
| VOLTAGE TOLERANCE IN PERCENT | -10.0 TO 10.0 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL CIRCLE DIAMETER | 0.022 INCHES MAXIMUM IN |