The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_length: 0.245 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.500 INCHES MINIMUM IN, overall_diameter: 0.200 INCHES NOMINAL IN, special_features: JUNCTION PATTERN ARRANGEMENT: PNPN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-432-2808, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| overall_length | 0.245 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| terminal_length | 0.500 INCHES MINIMUM IN |
| overall_diameter | 0.200 INCHES NOMINAL IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: PNPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | UNIJUNCTION |
| semiconductor_material | SILICON |
| terminal_type_and_quantity | 3 UNINSULATED WIRE LEAD |
| power_rating_per_characteristic | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| maximum_operating_temp_per_measurement_point | 100.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-00-432-2808 |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | UNIJUNCTION |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 CELSIUS AMBIENT AIR DEGC |
| OVERALL DIAMETER | 0.200 INCHES NOMINAL IN |
| SEMICONDUCTOR MATERIAL | SILICON |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-98 |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |