10670766: SEMICONDUCTOR DEVICE,DIODE.
The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN, overall_diameter: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.
Government catalog under NSN 5961-00-433-7008, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | SILICON SEMICONDUCTOR |
| overall_length | 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN |
| overall_diameter | 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| features_provided | HERMETICALLY SEALED CASE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| current_rating_per_characteristic | 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| voltage_rating_in_volts_per_characteristic | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 175.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-00-433-7008 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 175.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS AMBIENT AIR DEGC |
| OVERALL DIAMETER | 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM IN |
| MOUNTING METHOD | TERMINAL |
| OVERALL LENGTH | 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM IN |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| MATERIAL | SILICON SEMICONDUCTOR |
| MATERIAL | GLASS ENCLOSURE |