103G3333-1-1 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

103G3333-1-1: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 1.253 INCHES MAXIMUM IN, mounting_method: THREADED STUD(S), features_provided: MOUNTING HARDWARE, nominal_thread_size: 0.190 INCHES IN, thread_series_designator: UNF. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-020-0826, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

103G3333-1-1

NSN: 5961-01-020-0826
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 67177 — ZENITH ELECTRONICS CORPORATION (USA)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	1.253 INCHES MAXIMUM IN
mounting_method	THREADED STUD(S)
features_provided	MOUNTING HARDWARE
nominal_thread_size	0.190 INCHES IN
thread_series_designator	UNF
mounting_facility_quantity	1
overall_width_across_flats	0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
terminal_type_and_quantity	1 TAB, SOLDER LUG AND 1 THREADED STUD
specification/standard_data	67177-103G3333 MANUFACTURERS SPECIFICATION
power_rating_per_characteristic	10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
current_rating_per_characteristic	490.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
NSN	5961-01-020-0826

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.2 MAXIMUM BREAKDOWN VOLTAGE, DC

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: THREADED STUD(S)

•

FEATURES PROVIDED: MOUNTING HARDWARE

•

OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN

•

NOMINAL THREAD SIZE: 0.190 INCHES IN

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	5.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.2 MAXIMUM BREAKDOWN VOLTAGE, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	150.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	THREADED STUD(S)
OVERALL LENGTH	1.253 INCHES MAXIMUM IN
FEATURES PROVIDED	MOUNTING HARDWARE
OVERALL WIDTH ACROSS FLATS	0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM IN
NOMINAL THREAD SIZE	0.190 INCHES IN
CURRENT RATING PER CHARACTERISTIC	490.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 1.84 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
SPECIFICATION/STANDARD DATA	67177-103G3333 MANUFACTURERS SPECIFICATION

SUBSTITUTES & CROSS-REFERENCES 1

JANTX1N3996RAReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)Demilitarization required — mutilation

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FREQUENTLY ASKED QUESTIONS

What is 103G3333-1-1?

103G3333-1-1 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 103G3333-1-1?

There is 1 known substitute for 103G3333-1-1: JANTX1N3996RA. Substitute compatibility should be verified for your specific system.

What is the NSN for 103G3333-1-1?

103G3333-1-1 is cataloged in the U.S. Government catalog under NSN 5961-01-020-0826. This indicates validated use in U.S. government and defense supply chains.

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103G3333-1-1 — SEMICONDUCTOR DEVICE,DIODE

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