The SEMICONDUCTOR DEVICES,UNITIZED is a the manufacturer industrial component. Key specifications include overall_length: 0.250 INCHES NOMINAL IN, mounting_method: TERMINAL, terminal_length: 0.490 INCHES MINIMUM IN, overall_diameter: 0.352 INCHES NOMINAL IN, features_provided: HERMETICALLY SEALED CASE, semiconductor_material: SILICON ALL TRANSISTOR. This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-436-2288, indicating validated use in U.S.
government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels. Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.250 INCHES NOMINAL IN |
| mounting_method | TERMINAL |
| terminal_length | 0.490 INCHES MINIMUM IN |
| overall_diameter | 0.352 INCHES NOMINAL IN |
| features_provided | HERMETICALLY SEALED CASE |
| semiconductor_material | SILICON ALL TRANSISTOR |
| terminal_circle_diameter | 0.200 INCHES NOMINAL IN |
| terminal_type_and_quantity | 8 UNINSULATED WIRE LEAD |
| component_name_and_quantity | 2 TRANSISTOR |
| power_rating_per_characteristic | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| current_rating_per_characteristic | 200.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
| voltage_rating_in_volts_per_characteristic | 30.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 6.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE ALL TRANSISTOR |
| NSN | 5961-00-436-2288 |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL IN |
| TERMINAL LENGTH | 0.490 INCHES MINIMUM IN |
| OVERALL LENGTH | 0.250 INCHES NOMINAL IN |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-76 |
| MOUNTING METHOD | TERMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| OVERALL DIAMETER | 0.352 INCHES NOMINAL IN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |