10133984 — MICROCIRCUIT,MEMORY

✓ Government record, cited

— · COMPONENT

PRODUCT OVERVIEW

10133984: MICROCIRCUIT,MEMORY.

The MICROCIRCUIT,MEMORY is a the manufacturer memory module engineered for enterprise server and workstation platforms requiring validated, high-reliability memory. Key specifications include features_provided: ELECTROSTATIC SENSITIVE AND TESTED TO MIL-STD-883 AND BURN IN AND PROGRAMMED, output_logic_form: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC, memory_device_type: PAL, storage_temp_range: -65.0 TO 150.0 CELSIUS DEGC, operating_temp_range: -55.0 TO 125.0 CELSIUS DEGC, hybrid_technology_type: MONOLITHIC. This part is cataloged in the U.S.

Government catalog under NSN 5962-01-388-2904, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

10133984

NSN: 5962-01-388-2904
FSC: 5962 — Microcircuits, Electronic
CAGE: A486G — NIMIKKEISTOKESKUS NCB FINLAND (FIN)

SPECIFICATIONS

features_provided	ELECTROSTATIC SENSITIVE AND TESTED TO MIL-STD-883 AND BURN IN AND PROGRAMMED
output_logic_form	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
memory_device_type	PAL
storage_temp_range	-65.0 TO 150.0 CELSIUS DEGC
operating_temp_range	-55.0 TO 125.0 CELSIUS DEGC
hybrid_technology_type	MONOLITHIC
end_item_identification	NEXT ASSY: 8515198-910 USED ON(SYS): 8515143-910
inclosure_configuration	LEADLESS FLAT PACK
terminal_type_and_quantity	20 LEADLESS
specification/standard_data	67268-5962-88713 GOVERNMENT STANDARD
departure_from_cited_designator	PROGRAMMED PER: TT8517302-112
maximum_power_dissipation_rating	1.2 WATTS
NSN	5962-01-388-2904

COMPONENT DIAGRAM

KEY FEATURES

•

HYBRID TECHNOLOGY TYPE: MONOLITHIC

•

FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND TESTED TO MIL-STD-883 AND BURN IN AND PROGRAMMED

•

INCLOSURE CONFIGURATION: LEADLESS FLAT PACK

•

MEMORY DEVICE TYPE: PAL

•

DEPARTURE FROM CITED DESIGNATOR: PROGRAMMED PER: TT8517302-112

•

CASE OUTLINE SOURCE AND DESIGNATOR: C-2A MIL-M-38510 A

•

SPECIFICATION/STANDARD DATA: 67268-5962-88713 GOVERNMENT STANDARD

•

STORAGE TEMP RANGE: -65.0 TO 150.0 CELSIUS DEGC

TYPICAL APPLICATIONS

Server memory expansion for virtualization workloads
Database performance optimization (in-memory computing)
VDI and remote desktop session hosting
High-performance computing (HPC) clusters
Mail server and collaboration platform scaling
Application server tier expansion

TECHNICAL CHARACTERISTICS

HYBRID TECHNOLOGY TYPE	MONOLITHIC
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE AND TESTED TO MIL-STD-883 AND BURN IN AND PROGRAMMED
INCLOSURE CONFIGURATION	LEADLESS FLAT PACK
MEMORY DEVICE TYPE	PAL
DEPARTURE FROM CITED DESIGNATOR	PROGRAMMED PER: TT8517302-112
CASE OUTLINE SOURCE AND DESIGNATOR	C-2A MIL-M-38510 A
SPECIFICATION/STANDARD DATA	67268-5962-88713 GOVERNMENT STANDARD
STORAGE TEMP RANGE	-65.0 TO 150.0 CELSIUS DEGC
OUTPUT LOGIC FORM	COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
VOLTAGE RATING AND TYPE PER CHARACTERISTIC	-3.0 VOLTS MINIMUM ABSOLUTE INPUT AND 7.0 VOLTS MAXIMUM ABSOLUTE INPUT

SUBSTITUTES & CROSS-REFERENCES 2

ROM/PROMReference document

Same NSN cross-reference

Reference document — Secondary reference

5962-8871309XAReference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandDemilitarization required — mutilation + specific procedure

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FREQUENTLY ASKED QUESTIONS

What is 10133984?

10133984 is a MICROCIRCUIT,MEMORY.

What parts can replace 10133984?

There are 2 known substitutes for 10133984: ROM/PROM, 5962-8871309XA. Substitute compatibility should be verified for your specific system.

What is the NSN for 10133984?

10133984 is cataloged in the U.S. Government catalog under NSN 5962-01-388-2904. This indicates validated use in U.S. government and defense supply chains.

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10133984 — MICROCIRCUIT,MEMORY

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