10133127 — SEMICONDUCTOR DEVICE,DIODE

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

10133127: SEMICONDUCTOR DEVICE,DIODE.

The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: SILICON SEMICONDUCTOR, overall_length: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.000 INCHES MINIMUM IN, overall_diameter: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN, features_provided: HERMETICALLY SEALED CASE. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-008-8910, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

10133127

NSN: 5961-01-008-8910
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: A486G — NIMIKKEISTOKESKUS NCB FINLAND (FIN)

SPECIFICATIONS

material	SILICON SEMICONDUCTOR
overall_length	0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
mounting_method	TERMINAL
terminal_length	1.000 INCHES MINIMUM IN
overall_diameter	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
features_provided	HERMETICALLY SEALED CASE
terminal_type_and_quantity	2 UNINSULATED WIRE LEAD
power_rating_per_characteristic	250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
voltage_rating_in_volts_per_characteristic	35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
maximum_operating_temp_per_measurement_point	125.0 CELSIUS JUNCTION DEGC
NSN	5961-01-008-8910

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 CELSIUS JUNCTION DEGC

•

OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN

•

TERMINAL LENGTH: 1.000 INCHES MINIMUM IN

•

MOUNTING METHOD: TERMINAL

•

FEATURES PROVIDED: HERMETICALLY SEALED CASE

•

MATERIAL: SILICON SEMICONDUCTOR

TECHNICAL CHARACTERISTICS

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	35.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION DEGC
OVERALL DIAMETER	0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM IN
TERMINAL LENGTH	1.000 INCHES MINIMUM IN
MOUNTING METHOD	TERMINAL
OVERALL LENGTH	0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM IN
FEATURES PROVIDED	HERMETICALLY SEALED CASE
MATERIAL	SILICON SEMICONDUCTOR
MATERIAL	GLASS ENCLOSURE
TERMINAL TYPE AND QUANTITY	2 UNINSULATED WIRE LEAD

SUBSTITUTES & CROSS-REFERENCES 6

HP5082-3168Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

5082-3168Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

353-3733-010Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

D10-3500-000Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

4P3500Reference document

Same NSN cross-reference

Reference document — Advisory reference — outside the item-of-supply concept

91462176Same NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Insurance item — stocked against contingency demandNo demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 10133127?

10133127 is a SEMICONDUCTOR DEVICE,DIODE.

What parts can replace 10133127?

There are 6 known substitutes for 10133127: HP5082-3168, 5082-3168, 353-3733-010 and 3 more. Substitute compatibility should be verified for your specific system.

What is the NSN for 10133127?

10133127 is cataloged in the U.S. Government catalog under NSN 5961-01-008-8910. This indicates validated use in U.S. government and defense supply chains.

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10133127 — SEMICONDUCTOR DEVICE,DIODE

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