1004630-01 — SEMICONDUCTOR DEVICE,THYRISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

1004630-01: SEMICONDUCTOR DEVICE,THYRISTOR.

The SEMICONDUCTOR DEVICE,THYRISTOR is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, overall_width: 0.375 INCHES NOMINAL IN, overall_height: 0.190 INCHES NOMINAL IN, overall_length: 0.420 INCHES NOMINAL IN, mounting_method: UNTHREADED HOLE(S), semiconductor_material: SILICON. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-110-3366, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

1004630-01

NSN: 5961-01-110-3366
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 1PQF4 — CAE USA INC. (USA)

SPECIFICATIONS

material	PLASTIC ENCLOSURE
overall_width	0.375 INCHES NOMINAL IN
overall_height	0.190 INCHES NOMINAL IN
overall_length	0.420 INCHES NOMINAL IN
mounting_method	UNTHREADED HOLE(S)
semiconductor_material	SILICON
mounting_facility_quantity	1
terminal_type_and_quantity	3 PIN
power_rating_per_characteristic	2.2 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
current_rating_per_characteristic	70.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
voltage_rating_in_volts_per_characteristic	200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
maximum_operating_temp_per_measurement_point	110.0 CELSIUS CASE DEGC
NSN	5961-01-110-3366

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 CELSIUS CASE DEGC

•

MOUNTING FACILITY QUANTITY: 1

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.190 INCHES NOMINAL IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	200.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	110.0 CELSIUS CASE DEGC
MOUNTING FACILITY QUANTITY	1
MOUNTING METHOD	UNTHREADED HOLE(S)
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	0.420 INCHES NOMINAL IN
OVERALL WIDTH	0.375 INCHES NOMINAL IN
CURRENT RATING PER CHARACTERISTIC	70.00 AMPERES MAXIMUM PEAK ON-STATE SURGE CURRENT
MATERIAL	PLASTIC ENCLOSURE

OTHER ITEMS IN FSC 5961 — Semiconductor Devices and Associated Hardware

Items in the same Federal Supply class. No interchangeability or substitution relationship is implied.

5961-00-000-0150 5961-00-000-4541 5961-00-000-5400 5961-00-000-7614 5961-00-000-8760 5961-00-001-1352 5961-00-001-2624 5961-00-001-2978

SUBSTITUTES & CROSS-REFERENCES 1

TIC226BSame NSN cross-reference

Same NSN cross-reference

Also cataloged under this NSN

LIFECYCLE

NSN statusActive· U.S. Government catalog

No demilitarization required

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FREQUENTLY ASKED QUESTIONS

What is 1004630-01?

1004630-01 is a SEMICONDUCTOR DEVICE,THYRISTOR.

What parts can replace 1004630-01?

There is 1 known substitute for 1004630-01: TIC226B. Substitute compatibility should be verified for your specific system.

What is the NSN for 1004630-01?

1004630-01 is cataloged in the U.S. Government catalog under NSN 5961-01-110-3366. This indicates validated use in U.S. government and defense supply chains.

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1004630-01 — SEMICONDUCTOR DEVICE,THYRISTOR

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