The SEMICONDUCTOR DEVICE,DIODE is a the manufacturer industrial component. Key specifications include material: GLASS ENCLOSURE, overall_length: 0.300 INCHES MAXIMUM IN, mounting_method: TERMINAL, terminal_length: 1.300 INCHES MINIMUM IN, overall_diameter: 0.165 INCHES MAXIMUM IN, special_features: NUCLEAR HARDNESS CRITICAL ITEM CATEGORY II; JUNCTION PATTERN ARRANGEMENT: PN. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-01-150-1792, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | GLASS ENCLOSURE |
| overall_length | 0.300 INCHES MAXIMUM IN |
| mounting_method | TERMINAL |
| terminal_length | 1.300 INCHES MINIMUM IN |
| overall_diameter | 0.165 INCHES MAXIMUM IN |
| special_features | NUCLEAR HARDNESS CRITICAL ITEM CATEGORY II; JUNCTION PATTERN ARRANGEMENT: PN |
| features_provided | HERMETICALLY SEALED CASE |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD |
| current_rating_per_characteristic | 2.50 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| nuclear_hardness_critical_feature | HARDENED |
| voltage_rating_in_volts_per_characteristic | 150.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| maximum_operating_temp_per_measurement_point | 175.0 CELSIUS JUNCTION DEGC |
| NSN | 5961-01-150-1792 |
| MATERIAL | GLASS ENCLOSURE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| SPECIAL FEATURES | NUCLEAR HARDNESS CRITICAL ITEM CATEGORY II; JUNCTION PATTERN ARRANGEMENT: PN |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM IN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 150.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 CELSIUS JUNCTION DEGC |
| CURRENT RATING PER CHARACTERISTIC | 2.50 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
| MATERIAL | SILICON SEMICONDUCTOR |