10-100-0300: LIGHT EMITTING DIODE.
The LIGHT EMITTING DIODE is a the manufacturer industrial component. Key specifications include material: PLASTIC ENCLOSURE, ring_style: INTERNAL, usage_design: INTERNAL, overall_length: 0.345 INCHES MAXIMUM IN, major_thickness: 1.24 MILLIMETERS MINIMUM AND 1.36 MILLIMETERS MAXIMUM MM, mounting_method: TERMINAL. This part is cataloged in the U.S.
Government catalog under NSN 5980-00-275-1967, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| material | PLASTIC ENCLOSURE |
| ring_style | INTERNAL |
| usage_design | INTERNAL |
| overall_length | 0.345 INCHES MAXIMUM IN |
| major_thickness | 1.24 MILLIMETERS MINIMUM AND 1.36 MILLIMETERS MAXIMUM MM |
| mounting_method | TERMINAL |
| terminal_length | 0.650 INCHES MINIMUM IN |
| outside_diameter | 32.90 MILLIMETERS MINIMUM AND 34.05 MILLIMETERS MAXIMUM MM |
| overall_diameter | 0.235 INCHES MAXIMUM IN |
| lens_transparency | TRANSLUCENT |
| luminous_intensity | 2.0 MILLICANDELA NOMINAL |
| internal_configuration | POINT CONTACT |
| NSN | 5980-00-275-1967 |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM REVERSE VOLTAGE, DC |
| OVERALL DIAMETER | 0.235 INCHES MAXIMUM IN |
| TERMINAL LENGTH | 0.650 INCHES MINIMUM IN |
| MOUNTING METHOD | TERMINAL |
| INTERNAL JUNCTION CONFIGURATION | PN |
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
| LUMINOUS INTENSITY | 2.0 MILLICANDELA NOMINAL |
| OVERALL LENGTH | 0.345 INCHES MAXIMUM IN |
| INTERNAL CONFIGURATION | POINT CONTACT |
| CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |