The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_length: 0.328 INCHES MAXIMUM IN, mounting_method: UNTHREADED HOLE(S), overall_diameter: 0.875 INCHES MAXIMUM IN, special_features: JUNCTION PATTERN ARRANGEMENT: NPN, features_provided: HERMETICALLY SEALED CASE, internal_configuration: JUNCTION CONTACT. This product is currently in active production with full OEM support.
This part is cataloged in the Federal Logistics Information System (FLIS) under NSN 5961-00-401-2955, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.
Verify compatibility with your specific system configuration before ordering.
| overall_length | 0.328 INCHES MAXIMUM IN |
| mounting_method | UNTHREADED HOLE(S) |
| overall_diameter | 0.875 INCHES MAXIMUM IN |
| special_features | JUNCTION PATTERN ARRANGEMENT: NPN |
| features_provided | HERMETICALLY SEALED CASE |
| internal_configuration | JUNCTION CONTACT |
| semiconductor_material | SILICON |
| mounting_facility_quantity | 2 |
| terminal_type_and_quantity | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| power_rating_per_characteristic | 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| current_rating_per_characteristic | 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| maximum_operating_temp_per_measurement_point | 150.0 CELSIUS AMBIENT AIR DEGC |
| NSN | 5961-00-401-2955 |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| POWER RATING PER CHARACTERISTIC | 100.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER AND 400.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR DEGC |
| MOUNTING FACILITY QUANTITY | 2 |
| SEMICONDUCTOR MATERIAL | SILICON |