012134-1DBR — TRANSISTOR

✓ Government record, cited

— · SFP TRANSCEIVER

PRODUCT OVERVIEW

012134-1DBR: TRANSISTOR.

The TRANSISTOR is a the manufacturer industrial component. Key specifications include overall_width: 1.050 INCHES MAXIMUM IN, overall_height: 0.450 INCHES MAXIMUM IN, overall_length: 1.573 INCHES MAXIMUM IN, transfer_ratio: 50.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER, mounting_method: UNTHREADED HOLE(S), special_features: JUNCTION PATTERN ARRANGEMENT: NPN. This part is cataloged in the U.S.

Government catalog under NSN 5961-01-197-4821, indicating validated use in U.S. government and defense logistics supply chains. Available through authorized enterprise resellers and TPM (Third Party Maintenance) channels.

Verify compatibility with your specific system configuration before ordering.

WHERE IT FITS

012134-1DBR

NSN: 5961-01-197-4821
FSC: 5961 — Semiconductor Devices and Associated Hardware
CAGE: 34156 — OSI OPTOELECTRONICS, INC DBA SEMICOA (USA)

SPECIFICATIONS

overall_width	1.050 INCHES MAXIMUM IN
overall_height	0.450 INCHES MAXIMUM IN
overall_length	1.573 INCHES MAXIMUM IN
transfer_ratio	50.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
mounting_method	UNTHREADED HOLE(S)
special_features	JUNCTION PATTERN ARRANGEMENT: NPN
features_provided	HERMETICALLY SEALED CASE
internal_configuration	JUNCTION CONTACT
semiconductor_material	SILICON
mounting_facility_quantity	2
terminal_type_and_quantity	2 PIN AND 1 CASE
power_rating_per_characteristic	175.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
NSN	5961-01-197-4821

COMPONENT DIAGRAM

KEY FEATURES

•

VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

•

MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 CELSIUS JUNCTION DEGC

•

MOUNTING FACILITY QUANTITY: 2

•

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3

•

MOUNTING METHOD: UNTHREADED HOLE(S)

•

TRANSFER RATIO: 50.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER

•

SEMICONDUCTOR MATERIAL: SILICON

TECHNICAL CHARACTERISTICS

OVERALL HEIGHT	0.450 INCHES MAXIMUM IN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION DEGC
MOUNTING FACILITY QUANTITY	2
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION	TO-3
MOUNTING METHOD	UNTHREADED HOLE(S)
TRANSFER RATIO	50.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
SEMICONDUCTOR MATERIAL	SILICON
OVERALL LENGTH	1.573 INCHES MAXIMUM IN
INTERNAL CONFIGURATION	JUNCTION CONTACT

SUBSTITUTES & CROSS-REFERENCES 1

2N6653Reference document

Same NSN cross-reference

Reference document — Secondary reference

LIFECYCLE

NSN statusActive· U.S. Government catalog

Acquisition advice: Normally procured from the manufacturer (OEM)No demilitarization required

Ready to buy 012134-1DBR?

Compare prices from verified sellers on eBay

Buy on eBay →

As an eBay Partner, PartsTable may earn a commission. Your price is not affected.

FREQUENTLY ASKED QUESTIONS

What is 012134-1DBR?

012134-1DBR is a TRANSISTOR.

What parts can replace 012134-1DBR?

There is 1 known substitute for 012134-1DBR: 2N6653. Substitute compatibility should be verified for your specific system.

What is the NSN for 012134-1DBR?

012134-1DBR is cataloged in the U.S. Government catalog under NSN 5961-01-197-4821. This indicates validated use in U.S. government and defense supply chains.

Community Feedback

012134-1DBR — TRANSISTOR

Request a Quote — 012134-1DBR